二肖四码最准最厉害
二肖四码最准最厉害 二肖四码最准最厉害

Si

Silicon is the chemical element that has the symbol Si and atomic number 14. A tetravalent metalloid, silicon is less reactive than its chemical analog carbon. As the eighth most common element in the universe by mass, silicon occasionally occurs as the pure free element in nature, but is more widely distributed in dusts, planetoids and planets as various forms of silicon dioxide (silica) or silicates. On Earth, silicon is the second most abundant element (after oxygen) in the crust,[1] making up 25.7% of the crust by mass.

Silicon has many industrial uses. Elemental silicon is the principal component of most semiconductor devices, most importantly integrated circuits or microchips. Silicon is widely used in semiconductors because it remains a semiconductor at higher temperatures than the semiconductor germanium and because its native oxide is easily grown in a furnace and forms a better semiconductor/dielectric interface than any other material.

In the form of silica and silicates, silicon forms useful glasses, cements, and ceramics. It is also a constituent of silicones, a class-name for various synthetic plastic substances made of silicon, oxygen, carbon and hydrogen, often confused with silicon itself.

Silicon is an essential element in biology, although only tiny traces of it appear to be required by animals. It is much more important to the metabolism of plants, particularly many grasses, and silicic acid (a type of silica) forms the basis of the striking array of protective shells of the microscopic diatoms.

TECHNICAL DATA
SymbolSiDensity (20°C)/gcm32.336 (ß2.905
Atomic number14Melting point / °C1420
No. of naturally occurring isotopes3Boiling point / °C-3280
Atomic weight28.0855(+/-3)ΔHfus/kJmol-150.6
Electronic configuration[Ne]3s23p2ΔHvap/kJmol-1383
rIV(covalent)/pm117.6ΔHf(monoatomic gas)/kJmol-1454
rIV (ionic, 6-coordinate)/pm40Ionization energy)/kJmol-1 I786.3
Electrical resistivity (20°C)/μohm cm~48Ionization energy)/kJmol-1 II1576.5
Pauling electronegativity1.8Ionization energy/kJmol-1 III3228.3
Band gap Eg/kJmol-1106.8Ionization energy/kJmol-1 IV


EVAPORATION TECHNIQUES
Temperature (oC) @Vap. PressureTechniquesRemarks
10-8Torr10-6Torr10-4TorrElectron BeamCrucibleCoilBoat
99211471337FairTantalum & Vitreous Graphite-Tungsten & TantalumAlloys with Tungsten; use heavy Tungsten Boat. SiO produced above 4x 10-6 Torr. EB Best



Si
Precision Alloys
AlloyDin SymbolElectrical Resistivity at 20°C     Conductivity  Density   
                 μΩ/Cm             S/W          g/cm3
NEXOHM®NiCr20AlSi1320.768

Thermo-electric Alloys
Model No.Symbol Melting Point                 Temp ToleranceTemp Range
°C                            °C 
KPNi, Si, Fe, Cr1430±2.2°C or ±0.75% (t90)0 to 1260Tolerance Standard
KNNi, Mn, Al, Si1400±2.2°C or ±0.75% (t90)0 to 1260
NPNi, Si, Cr1394±2.2°C or ±0.75% (t90)0 to 1260
NNNi, Si1341±2.2°C or ±0.75% (t90)0 to 1260
EPNi, Si, Fe, Cr1430±1.7°C or ±0.5% (t90)0 to 870
JPFe, Mn, Si, Al1496±2.2°C or ±0.75% (t90)0 to 760
KPXNi, Si, Fe, Cr1430±2.2°C0 to 200
KNXNi, Mn, Al, Si1400±2.2°C0 to 200
NPXNi, Si, Cr1394±2.2°C0 to 200
NNXNi, Si1341±2.2°C0 to 200
EPXNi, Si, Fe, Cr1430±1.7°C0 to 200
JPXFe, Mn, Si, Al1496±2.2°C0 to 200
KPCAFe, Mn, Si, Al1496±100μV(±2.5°C)0 to 150Tolerance Standard

Sputtering Targets
Matierial SymbolAtomic Number     Thermal Conductivity         Theoretical Density 
W/m.Kg/cc
Silicon_Si Si141502.32

Evaporation Materials
Matierial SymbolAtomic Number     Thermal Conductivity         Theoretical Density 
W/m.Kg/cc
Si ( pieces )Si141502.32



Below is the periodic table of chemical elements.The elements in red are the ones Nexteck's product contain. Click them, you will come to the details.

-->

二肖四码最准最厉害

Providing real-time and high quality service

NEXTECK (CHINA) - SHENZHEN
Tower A1001, Galaxy Century, No 3069, CaiTian Rd, Futian District, Shenzhen, China
Zip Code: 518026
Tel: +86-755-8256-1631
Fax:+86-755-8256-1691
E-mail:[email protected]

PRODUCTION PLANT
Wenchuan Rd, Alley 5300/1, Baoshan District, Shanghai, China
Zip Code: 200942
Tel: +86-21-3638-0189
Fax: +86-21-3638-0109
E-mail: [email protected]